Nitrogen ion implanted InP based photo-switch
نویسندگان
چکیده
منابع مشابه
Annealing behaviour of high-dose-implanted nitrogen in InP
Concentration profiles of nitrogen in vacuumannealed pand n-type single-crystal (1 0 0) InP implanted with 1]101630 keV 15N` ions cm~2 have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford Backscattering Spectrometry (RBS) and channeling. Annealing the samples led to lo...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2012
ISSN: 1094-4087
DOI: 10.1364/oe.20.026696